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BAS40/ -04/ -05/ -06
Document number: DS11006 Rev. 25 - 2
2 of 5
www.diodes.com
December 2013
? Diodes Incorporated
BAS40/ -04/ -05/ -06
Marking Information
Date Code Key
Year
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
2013
2014
2015
Code
K
L
M
N
P
R
S
T
U
V
W X Y Z A B C
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1 2 3 4 5 6 7 8 9 O N D
Maximum Ratings
(@TA
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage?
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
V
Forward Continuous Current (Note 6)
IFM
200
mA
Forward Surge Current (Note 6) @ t < 1.0s
IFSM
600
mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 6)
PD
350
mW
Thermal Resistance, Junction to Ambient Air (Note 6)
R?JA
357
°C/W
Operating Temperature Range
TJ
-55 to +125
°C
Storage Temperature Range
TSTG
-65 to +150
°C
Electrical Characteristics
(@TA
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 7)
V(BR)R
40
??
??
V
I
R
= 10μA
Forward Voltage
VF
??
??
380
1000
mV
tp
< 300μs, I
F
= 1.0mA
?
tp
< 300μs, I
F
= 40mA
Reverse Leakage Current (Note 7)
IR
??
20
200
nA
tp < 300μs, VR
= 30V
Total Capacitance
CT
??
4.0
5.0
pF
VR
= 0V, f =1.0MHz
Reverse Recovery Time
trr
??
??
5.0
ns
IF
= I
R
= 10mA to I
R
= 1.0mA,
RL
= 100
?
Notes: 6. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
7. Short duration pulse test used to minimize self-heating effect.
xxx = Product Type Marking Code
K43 = BAS40
K44 = BAS40-04
K45 = BAS40-05
K46 = BAS40-06
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
?
Y or Y
= Year (ex: A = 2013)
?
M = Month (ex: 9 = September)
Chengdu A/T Site
Shanghai A/T Site
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